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3CA8550 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a TO-92 Plastic Package
3CA8550
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
-40
-25
-6.0
-1.5
-0.5
1.0
150
-55~150
单位
Unit
V
V
V
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=-0.1mA IE=0
VCEO IC=-2.0mA IB=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-40
V
-25
V
Emitter to Base Breakdown Voltage VEBO IE=-0.1mA IC=0
-6.0
V
Collector Cut-Off Current
ICBO VCB=-35V IE=0
-0.1 μA
Emitter Cut-Off Current
IEBO VEB=-6.0V IC=0
-0.1 μA
hFE(1) VCE=-1.0V IC=-100mA 85
300
DC Current Gain
hFE(2) VCE=-1.0V IC=-800mA 40
Collector to Emitter Saturation
Voltage
hFE(3) VCE=-1.0V IC=-5.0mA 45
VCE(sat) IC=-800mA IB=-80mA
-0.28 -0.5 V
Base to Emitter Saturation Voltage VBE(sat) IC=-800mA IB=-80mA
-0.98 -1.2 V
Base to Emitter Voltage
VBE VCE=-1.0V IC=-10mA
-0.66 -1.0 V
Transition Frequency
Collector Output Capacitance
fT VCE=-10V IC=-50mA
Cob
VCB=-10V
f=1.0MHz
IE=0
100 200
15
MHz
pF
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