2SD2061 Datasheet, PDF (2/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-220F Plastic-Encapsulate Transistors

2SD2061
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
80
60
5.0
3.0
6.0
2.0
30
150
-55～150
单位
Unit
V
V
V
A
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=50μA
V_CEO I_C=1.0mA
Emitter to Base Breakdown Voltage V_EBO I_E=50μA
Collector Cut-Off Current
I_CBO V_CB=60V I_E=0
Emitter Cut-Off Current
I_EBO V_EB=4.0V I_C=0
DC Current Gain
Collector to Emitter Saturation
Voltage
h_FE V_CE=5.0V
V_CE(sat) I_C=2.0A
I_C=500mA
I_B=0.2A
Base to Emitter Saturation Voltage
Transition Frequency
Collector output capacitance
V_BE(sat)
f_T
C_ob
I_C=2.0A
V_CE=5.0V
f=5.0MHz
V_CB=10V
f=1.0MHz
I_B=0.2A
I_E=-0.5A
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
80
V
60
V
5.0
V
10 μA
10 μA
100
320
1.0 V
1.5 V
8.0
MHz
70
pF
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