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| 2SD1119 Datasheet, PDF (2/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification0 | |||
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2SD1119
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Collector Current -Continuous(Pluse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
40
25
7.0
3.0
5.0
1.0
150
-55ï½150
åä½
Unit
V
V
V
A
A
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCEO IC=1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=10mA IC=0
Collector Cut-Off Current
ICBO VCB=10V IE=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=2.0V
VCE=2.0V
VCE(sat) IC=3.0A
IC=0.5A
IC=2.0A
IB=0.1A
Transition Frequency
Collector Output Capacitance
fT VCE=6.0V IC=50mA
Cob
VCB=20V
f=1.0MHz
IE=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
25
V
7.0
V
0.1 μA
180
600
150
1.0 V
150
MHz
50 pF
http://www.fsbrec.com
2/6
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