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2SC945M Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-23 Plastic Package
2SC945M
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Base - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
60
50
5.0
150
20
250
150
-55~150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
符号
Symbol
测试条件
Test Conditions
ICBO VCB=60V IE=0
IEBO VEB=5.0V IC=0
hFE(1) VCE=6.0V IC=1.0mA
hFE(2) VCE=6.0V IC=0.1mA
VCE(sat) IC=100mA IB=10mA
VBE(sat)
VBE
fT
Cob
NF
IC=100mA
VCE=6.0V
VCE=6.0V
VCB=6.0V
f=1.0MHz
VCE=6.0V
Rg=2.0KΩ
IB=10mA
IC=1.0mA
IC=10mA
IE=0
IC=0.1mA
f=1.0KHz
最小值 典型值 最大值 单位
Min Typ Max Unit
0.1 μA
0.1 μA
90
600
50
0.15 0.3 V
0.86 1.0 V
0.62 0.65 V
150 250 450 MHz
3.0 4.0 pF
0.8 15 dB
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