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2SC945 Datasheet, PDF (2/6 Pages) NEC – NPN Silicon Transistor(AF amplifier and low speed switching) | |||
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2SC945
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current â Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
60
50
5.0
150
20
250
150
-55ï½150
åä½
Unit
V
V
V
mA
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
符å·
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
æµè¯æ¡ä»¶
Test Conditions
VCB=60V IE=0
VEB=5.0V IC=0
VCE=6.0V IC=1.0mA
VCE=6.0V IC=0.1mA
IC=100mA IB=10mA
æå°å¼ å
¸åå¼ æ大å¼
Min Typ Max
0.1
0.1
90
600
50
0.15 0.3
åä½
Unit
μA
μA
V
VBE(sat)
VBE
fT
Cob
NF
IC=100mA
VCE=6.0V
VCE=6.0V
VCB=6.0V
f=1.0MHz
VCE=6.0V
Rg=2.0Kâ¦
IB=10mA
IC=1.0mA
IC=10mA
IE=0
IC=0.1mA
f=1.0KHz
0.86 1.0
0.62 0.65
150 250 450
3.0 4.0
0.8 15
V
V
MHz
pF
dB
http://www.fsbrec.com
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