2SC5885 Datasheet, PDF (2/6 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type

2SC5885
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage(V_BE=0)
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
P_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
1500
1500
800
5.0
6.0
15.0
2.0
30
150
-55～150
单位
Unit
V
V
V
V
A
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
Emitter to Base Breakdown Voltage V_EBO I_E=500mA I_C=0
5.0
V
Forward Voltage
V_F
I_F=3A
2.0 V
Collector Cut-Off Current
V_CB=1000V I_E=0
I_CBO
V_CB=1500V I_E=0
50 uA
1.0 mA
Emitter Cut-Off Current
I_EBO
V_EB=4V
I_C=0
40
130 mA
DC Current Gain*
Collector to Emitter Saturation
Voltage*
h_FE* V_CE=5.0V I_C=3.0A
5
V_CE(sat)* I_C=3.0A
I_B=0.75A
10
2.5 V
Base to Emitter Saturation Voltage*
Transition Frequency
V_BE(sat)*
f_T
I_C=3.0A
I_C=0.1A
f=0.5MHz
I_B=0.75A
V_CE=10V
1.5 V
3
MHz
Storage Time
Fall Time
T_STG
T_f
V_CC=5V
I_C=0.5A(UI9600)
3
8
us
0.8 us
*脉冲测试：脉冲周期≤300μs，占空比≤2%。  *pulse test: pulse width≤300μs,duty cycle=≤2%.
http://www.fsbrec.com
2/6