2SC536K Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-92 Plastic Package

2SC536(K)
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
2SC536
2SC536K
V_CEO
2SC536
2SC536K
V_EBO
I_C
I_CP
P_C
T_j
T_stg
DATA SHEET
数值
Rating
40
55
30
50
5.0
100
300
400
150
-55～150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Gain Bandwidth Product
Output Capacitance Time
Constant
Collector to Base
符号
Symbol
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
C_C.rbb′
测试条件
Test Conditions
V_CB=35V I_E=0
V_EB=4.0V I_C=0
V_CE=6.0V I_C=1.0mA
I_C=50mA I_B=5.0mA
V_CE=6.0V
V_CB=6.0V
f=1.0MHz
V_CB=6.0V
f=31.9MHz
I_C=1.0mA
I_E=0
I_c=1.0mA
最小值 典型值 最大值
Min Typ Max
1.0
1.0
60
960
单位
Unit
μA
μA
0.5
V
100
MHz
3.5
pF
250
pS
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