2SC4382 Datasheet, PDF (2/6 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

2SC4382
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
200
200
6.0
2.0
1.0
25
150
-55～150
单位
Unit
V
V
V
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
V_CEO I_C=25mA I_E=0
I_CBO V_CB=200V I_E=0
I_EBO V_EB=6.0V I_C=0
h_FE V_CE=10V I_C=700mA
V_CE(sat) I_C=700mA I_B=70mA
V_BE(sat)
f_T
C_ob
I_C=500mA
V_CE=12V
V_CB=10V
I_B=50mA
I_C=200mA
f=1.0MHz
最小值 典型值 最大值 单位
Min Typ Max Unit
200
V
10 μA
10 μA
60
200
1.0 V
0.9 1.2 V
15
MHz
35
pF
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