2SC4159 Datasheet, PDF (2/6 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

2SC4159
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_cp
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
180
160
6.0
1.5
3.0
15
150
-55～150
单位
Unit
V
V
V
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=1.0mA I_E=0
V_CEO I_C=1.0mA R_BE=∞
Emitter to Base Breakdown Voltage V_EBO I_E=1.0mA I_C=0
Collector Cut-Off Current
I_CBO V_CB=120V I_E=0
Emitter Cut-Off Current
I_EBO V_EB=4.0V I_C=0
DC Current Gain
Collector to Emitter Saturation
Voltage
h_FE V_CE=5.0V
V_CE(sat) I_C=500mA
I_C=300mA
I_B=50mA
Base to Emitter Voltage
V_BE V_CE=5.0V I_C=10mA
Transition Frequency
f_T V_CE=10V I_C=50mA
Collector output capacitance
C_ob V_CB=10V f=1.0MHz
最小值 典型值 最大值 单位
Min Typ Max Unit
180
V
160
V
6.0
V
10 μA
10 μA
60
200
0.3
V
1.5 V
100
MHz
23
pF
http://www.fsbrec.com
2/6