2SC4083 Datasheet, PDF (2/5 Pages) Weitron Technology – NPN Silicon Transistor

2SC4083
Rev.D Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
20
11
3.0
50
200
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=10μA
I_E=0
V_CEO I_C=1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=10μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=10V I_E=0
Emitter Base Cut-Off Current
I_EBO V_EB=2.0V I_C=0
DC Current Gain
h_FE V_CE=10V I_C=5.0mA
Collector-Emitter Saturation Voltage V_CE(sat)
Transition Frequency
f_T
Output Capacitance
Collector-Base Time Constant
C_ob
C_C.rbb,
Noise Factor
NF
I_C=10mA
V_CE=10V
f=500MHz
V_CB=10V
f=1.0MHz
V_CB=10V
f=31.8MHz
V_CE=6V
f=500MHz
I_B=5.0mA
I_E=10mA
I_E=0mA
I_C=10mA
I_C=2mA
Rg=50Ω
最小值 典型值 最大值 单位
Min Typ Max Unit
20
V
11
V
3.0
V
0.5 μA
0.5 μA
56
180
0.5 V
1.4 3.2
GHz
0.8 1.5 pF
4.0 12 pS
3.5
dB
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