2SC4081W Datasheet, PDF (2/6 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

2SC4081W
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
60
50
7.0
150
200
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=50μA
I_E=0
V_CEO I_C=1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=50μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=60V I_E=0
Emitter Base Cut-Off Current
I_EBO V_EB=7.0V I_C=0
DC Current Gain
h_FE V_CE=6.0V I_C=1.0mA
Collector-Emitter Saturation Voltage V_CE(sat)
Transition Frequency
f_T
Output Capacitance
C_ob
I_C=50mA
V_CE=12V
f=100MHz
V_CB=12V
f=1.0MHz
I_B=5.0mA
I_E=-2.0mA
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
60
V
50
V
7.0
V
0.1 μA
0.1 μA
120
560
0.4 V
180
MHz
2.0 3.5 pF
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