2SC4003 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

2SC4003
Rev.E May.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
P_C(T_c=25℃)
T_j
T_stg
DATA SHEET
数值
Rating
400
400
5.0
200
400
1.0
10
150
-55～150
单位
Unit
V
V
V
mA
mA
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=10μA
I_E=0
V_CEO I_C=1.0mA R_BE=∞
Emitter to Base Breakdown Voltage V_EBO I_E=10μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=300V I_E=0
Emitter Cut-Off Current
I_EBO V_EB=4.0V I_C=0
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
h_FE V_CE=10V
V_CE(sat) I_C=50mA
V_BE(sat) I_C=50mA
I_C=50mA
I_B=5.0mA
I_B=5.0mA
Transition Frequency
f_T V_CE=30V I_C=10mA
Collector output capacitance
C_ob V_CB=30V f=1.0MHz
Reverse Transfer Capacitance
C_re V_CB=30V f=1.0MHz
Turn-On Time
Turn-Off Time
t_{on 10IB1=-10IB2=IC=50mA}
T_off ^RL=3KΩ
R_B=200Ω
最小值 典型值 最大值 单位
Min Typ Max Unit
400
V
400
V
5.0
V
0.1 μA
0.1 μA
60
200
0.6 V
1.0 V
70
MH_Z
4.0
pF
3.0
pF
0.25
μs
5.0
μs
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