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| 2SC3902 Datasheet, PDF (2/6 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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2SC3902
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current â Continuous(Pulse)
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC(TC=25â)
Tj
Tstg
DATA SHEET
æ°å¼
Rating
180
160
6.0
1.5
2.5
1.5
10
150
-55ï½150
åä½
Unit
V
V
V
A
A
W
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=10μA
IE=0
VCEO IC=1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=10μA IC=0
Collector Cut-Off Current
ICBO VCB=120V IE=0
Emitter Cut-Off Current
IEBO VEB=4.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=5.0V
VCE=5.0V
VCE(sat) IC=500mA
IC=100mA
IC=10mA
IB=50mA
Base to Emitter Saturation Voltage VBE(sat) IC=500mA IB=50mA
Transition Frequency
fT VCE=10V IC=50mA
Collector output capacitance
Cob VCB=10V f=1.0MHz
Turn-On Time
ton
Storage Time
tstg IC=10IB1=-10IB2=700mA
Fall Time
tf
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
180
V
160
V
6.0
V
0.1 μA
0.1 μA
100
400
90
0.13 0.45 V
0.85 1.2 V
120
MHz
14
pF
0.04
1.2
μs
0.08
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