2SC3253 Datasheet, PDF (2/6 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

2SC3253
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C (Tc=25℃)
T_j
T_stg
DATA SHEET
数值
Rating
80
60
5.0
5.0
7.0
30
150
-55～150
单位
Unit
V
V
V
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Emitter Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
Turn-On Time
Storage Time
Fall Time
符号
Symbol
V_CEO
V_CBO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
t_on
t_stg
t_f
测试条件
Test Conditions
I_C=1mA
R_BE=∞
最小值 典型值 最大值
Min Typ Max
60
单位
Unit
V
I_C=1mA
I_E=0
80
V
I_C=1mA
I_C=0
5
V
V_CB=40V I_E=0
V_EB=4V
I_C=0
V_CE=2V
I_C=1A
70
100 μA
100 μA
280
I_C=2.5A
I_B=0.125A
0.4
V
V_CE=5V
I_E=1A
See specified Test
Circuit
100
MHz
0.1
μs
0.5
μs
0.1
μs
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