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| 2SC2668 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS | |||
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2SC2668
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Emitter Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
40
30
4.0
20
-20
100
150
-55ï½150
åä½
Unit
V
V
V
mA
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Transition Frequency
Power Capacitance Gain
Noise Figure
Collector- Base Time Constant
Reverse Transfer Capacitance
符å·
Symbol
ICBO
IEBO
hFE
fT
Gpe
NF
CC.rbbâ²
Cre
æµè¯æ¡ä»¶
Test Conditions
VCB=40V IE=0
VEB=4.0V IC=0
VCE=6.0V IC=1.0mA
VCE=6.0V
Vcc=6.0V
f=100MHz
Vcc=6.0V
f=100MHz
VCE=6.0V
f=30MHz
IC=1.0mA
IE=-1.0mA
IE=-1.0mA
IE=-1.0mA
VCE=6.0V f=1.0MHz
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
0.5 μA
0.5 μA
40
200
550
MHz
18
dB
2.5 5.0 dB
20 pS
0.70
pF
http://www.fsbrec.com
2/6
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