2SC2500 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

2SC2500
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
DATA SHEET
数值
Rating
30
10
6.0
2.0
0.5
900
150
-55～150
单位
Unit
V
V
V
A
A
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
V_CEO I_C=10mA I_B=0
V_EBO I_E=1.0mA
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CB=30V
V_EB=6.0V
V_CE=1.0V
V_CE=1.0V
V_CE(sat) I_C=2.0A
V_BE V_CE=1.0V
f_T V_CE=1.0V
C_ob
V_CB=10V
f=1.0MHz
I_C=0
I_E=0
I_C=0
I_C=0.5A
I_C=2.0A
I_B=50mA
I_C=2.0A
I_C=0.5A
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
10
V
6.0
V
0.1 μA
0.1 μA
140
600
70 200
0.2 0.5 V
0.86 1.5 V
150
MHz
27
pF
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