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2SC2383T Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-89 Plastic Package
2SC2383T
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Collector Base-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
160
160
6.0
1.0
0.5
500
150
-55~150
单位
Unit
V
V
V
A
A
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Emitter to Base Saturation Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
测试条件
Test Conditions
VCEO IC=10mA IB=0
ICBO VCB=150V IE=0
IEBO VEB=6.0V IC=0
hFE VCE=5.0V IC=200mA
VCE(sat) IC=500mA IB=50mA
VBE VCE=5.0V IC=5.0mA
fT VCE=5.0V IC=200mA
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
160
V
1.0 μA
1.0 μA
60
320
1.5 V
0.45
20 100
0.75 V
MHz
20 pF
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