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| 2SC2335 Datasheet, PDF (2/6 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING | |||
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2SC2335
Rev.F Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
PC(Tc=25â )
Tj
Tstg
DATA SHEET
æ°å¼
Rating
500
400
7.0
7.0
3.5
1.5
40
150
-55ï½150
åä½
Unit
V
V
V
A
A
W
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Turn-On Time
Storage Time
Fall Time
符å·
Symbol
VCEO
VCEX(SUS)1
VCEX(SUS)2
ICBO
ICER
ICEX1
ICEX2
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
ton
tstg
tr
æµè¯æ¡ä»¶
Test Conditions
IC=3A
L=1mH
IB1=0.6A
IC=3A IB1=-IB2=0.6A
VBE(OFF)=-5V L=180μH
IC=6A
IB1=2A
-IB2=0.6A
VBE(OFF)=-5V L=180μH
VCB=400V IE=0
VCE=400V RBE=51â¦
TA=125â
VCE=400V
RBE(OFF)=-1.5V
VCE=400V RBE=-1.5V
TA=125â
VEB=5V
IC=0
VCE=5V
IC=0.1A
VCE=5V
IC=1A
VCE=5V
IC=3A
æå°å¼ å
¸åå¼ æ大å¼
Min Typ Max
400
450
400
1.0
1.0
10
1.0
10
20
80
20
80
10
åä½
Unit
V
V
V
μA
mA
μA
mA
μA
IC=3A
IB=0.6A
1.0 V
IC=3A
IB=0.6A
IC=3A
RL=50â¦
IB1=-IB2=0.6A VCC=150V
Refer to the test circuit
1.2 V
1.0 μS
2.5 μS
1.0 μS
http://www.fsbrec.com
2/6
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