2SC2310 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-92 Plastic Package

2SC2310
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Emitter Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
DATA SHEET
数值
Rating
55
50
5.0
100
-100
200
150
-55～150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Noise Figure
NF
Small Signal Input Impedance
h_ie
Small Signal Voltage Feedback
Ratio
h_re
Small Signal Current Transfer
Ratio
h_fe
Small Signal Output Admittance h_oe
测试条件
Test Conditions
I_C=10μA
I_E=0
I_C=1.0mA R_BE=∞
I_E=10μA
V_CB=18V
V_EB=2.0V
V_CE=12V
I_C=10mA
V_CE=12V
V_CE=12V
V_CB=10V
f=1.0MHz
V_CE=6.0V
f=120Hz
V_CE=5.0V
f=270Hz
V_CE=5.0V
f=270Hz
V_CE=5.0V
f=270Hz
V_CE=5.0V
f=270Hz
I_C=0
I_E=0
I_C=0
I_C=2.0mA
I_B=1.0mA
I_C=2.0mA
I_C=2.0mA
I_E=0
I_C=0.1mA
R_g=500Ω
I_C=0.1mA
I_C=0.1mA
I_C=0.1mA
I_C=0.1mA
最小值 典型值 最大值
Min Typ Max
55
单位
Unit
V
50
V
5.0
0.5
0.5
100
320
0.2
0.67 0.75
230
1.8 3.5
V
μA
μA
V
V
MHz
pF
3.0 5.0 dB
16.5
70
KΩ
×10^-6
130
11
μS
http://www.fsbrec.com
2/6