2SC2258 Datasheet, PDF (2/6 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

2SC2258(A)
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous(Pulse)
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation*
Junction Temperature
Storage Temperature Range
* 带铝散热片尺寸：100×100×20mm。
* With a 100×100×20mm Al heat sink.
符号
Symbol
V_CBO
2SC2258
2SC2258A
V_CEO
2SC2258
2SC2258A
V_EBO
I_CP
I_C
P_C
*P_C(T_C=25℃)
T_j
T_stg
电性能参数 / Electrical Characteristics(Ta=25℃)
数值
Rating
250
300
250
300
7.0
150
100
1.0
4.0*
150
-55～150
单位
Unit
V
V
V
mA
mA
W
W
℃
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Emitter to Base Breakdown Voltage V_EBO I_E=0.1mA I_C=0
Collector Cut-Off Current
I_CEO V_CE=250V I_B=0
DC Current Gain
Collector to Emitter Saturation
Voltage
h_FE(1)
h_FE(2)
V_CE=20V
V_CE=50V
V_CE(sat) I_C=50mA
I_C=40mA
I_C=5.0mA
I_B=5.0mA
Base to Emitter Voltage
V_BE V_CE=20V I_C=40mA
Transition Frequency
Reverse Transfer Capacitance
f_T V_CB=10V I_C=10mA
C_ob
V_CB=50V
f=1.0MHz
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
7.0
V
100 μA
40
200
30
1.2 V
1.2 V
100
MHz
3.0 4.5 pF
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