2SC2233 Datasheet, PDF (2/6 Pages) Mospec Semiconductor – NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications)

2SC2233
Rev.F Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_D(T_C=25℃ )
T_j
T_stg
数值
Rating
200
60
5.0
4.0
10
2.0
40
150
-55～150
单位
Unit
V
V
V
A
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Transition Frequency
符号
Symbol
V_CEO
V_EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
测试条件
Test Conditions
I_C=50mA I_B=0
I_B=1.0mA
V_CB=170V
V_EB=5.0V
V_CE=5.0V
V_CE=5.0V
I_C=4.0A
I_C=0
I_E=0
I_C=0
I_C=1.0A
I_C=4.0A
I_B=0.4A
I_C=4.0A
V_CE=5.0V
f=1.0MHZ
I_B=0.4A
I_C=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
60
V
5.0
V
10 μA
10 μA
30
150
20
1.0 V
1.5 V
5.0
MHZ
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