2SC2073A Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, VERTICAL OUTPUT APPLICATIONS)

2SC2073A
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
150
150
5.0
1.5
0.5
2.0
25
150
-55～150
单位
Unit
V
V
V
A
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
I_CBO V_CB=120V I_E=0
I_EBO V_EB=5.0V I_C=0
h_FE V_CE=10V I_C=500mA
最小值 典型值 最大值 单位
Min Typ Max Unit
10 μA
10 μA
40 75 140
V_CE(sat) I_C=500mA I_B=50mA
1.5 V
V_BE V_CE=10V I_C=500mA 0.65 0.75 0.85 V
f_T V_CE=10V I_C=500mA
C_ob
V_CB=10V
f=1.0MHz
I_E=0
4.0
MHz
35
pF
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