2SC1317 Datasheet, PDF (2/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

2SC1317
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
DATA SHEET
数值
Rating
30
25
7.0
500
1.0
625
150
-55～150
单位
Unit
V
V
V
mA
A
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
V_CBO
V_CEO
V_EBO
I_CBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
测试条件
Test Conditions
I_C=10μA
I_E=0
最小值 典型值 最大值
Min Typ Max
30
单位
Unit
V
I_C=10mA I_B=0
25
V
I_E=10μA
I_C=0
7.0
V
V_CB=20V I_E=0
0.1 μA
V_CE=10V I_C=150mA 85 160 340
V_CE=10V I_C=500mA 40 90
I_C=300mA I_B=30mA
0.35 0.6
V
I_C=300mA
V_CE=10V
V_CB=10V
f=1.0MHz
I_B=30mA
I_C=50mA
I_E=0
1.1 1.5
200
6.0 15
V
MHz
pF
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