2SA844 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

2SA844
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Emitter Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
DATA SHEET
数值
Rating
-55
-55
-5.0
-100
100
300
150
-55～150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
测试条件
Test Conditions
I_C=-10μA I_E=0
最小值 典型值 最大值
Min Typ Max
-55
单位
Unit
V
I_C=-1.0mA I_B=0
-55
V
I_E=-10μA I_C=0
-5.0
V
V_CB=-18V I_E=0
V_EB=-2.0V I_C=0
V_CE=-12V I_C=-2.0mA 160
-0.1 μA
-0.05 μA
800
I_C=-10mA I_B=-1.0mA
-0.1 -0.5
V
V_CE=-12V
V_CE=-12V
V_CB=-10V
f=1.0MHz
I_C=-2.0mA
I_C=-2.0mA
I_E=0
-0.66 -0.75
200
2.0
V
MHz
pF
http://www.fsbrec.com
2/6