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| 2SA778 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial | |||
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2SA778(A)
Rev.E Mar.-2016
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
2SA778
2SA778A
VCEO
2SA778
2SA778A
VEBO
IC
PC
Tj
Tstg
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
æ°å¼
Rating
-150
-180
-150
-180
-5.0
-50
200
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
åæ°
Parameter
Collector to Base Breakdown
Voltage
符å·
Symbol
VCBO
2SA778
2SA778A
æµè¯æ¡ä»¶
Test Conditions
IC=-50μA IE=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-150
V
-180
Collector to Emitter
Breakdown Voltage
2SA778
VCBO
IC=-50μA
2SA778A
IE=0
-150
-180
V
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
Turn On Time
Turn Off Time
Storage Time
ICBO
2SA778
2SA778A
IEBO
2SA778
hFE
2SA778A
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
tstg
VCB=-100V
VCB=-150V
VEB=-5.0V
IE=0
IE=0
IC=0
VCE=-3.0V IC=-15mA
IC=-15mA IB=-1.0mA
IC=-15mA IB=-1.0mA
VCE=-3.0V IC=-15mA
VCB=-10V IE=0
f=1.0MHz
VCC=-10.3V IC=10
IB1=-10 IB2=-10mA
VCC=-10.3V IC=10
IB1=-10 IB2=-10mA
VCC=-10V IC=-17mA
IB1=-1.0mA IB2=12mA
-0.1 μA
-1.0 μA
30 100
40 100 200
-0.3 -1.0 V
-0.77 -1.0 V
50
MHz
10 pF
135
ns
1.7
μs
1.0 μs
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