2SA673A Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

2SA673(A)
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
2SA673
2SA673A
V_CEO
2SA673
2SA673A
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
-35
-50
-35
-50
-4.0
-500
400
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base
Breakdown Voltage
符号
测试条件
Symbol
Test Conditions
2SA673
V_CBO
I_C=-10μA
2SA673A
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-35
V
-50
Collector to Emitter
Breakdown Voltage
2SA673
V_CEO
I_C=-1.0mA
2SA673A
I_B=0
-35
-50
V
Emitter to Base Breakdown
Voltage
V_EBO
I_E=-10μA I_C=0
-4.0
V
Collector Cut-Off Current
I_CBO
V_CB=-20V I_E=0
-0.5 μA
DC Current Gain
Collector to Emitter
Saturation Voltage
h_FE(1)
h_FE(2)
V_CE(sat)
V_CE=-3.0V I_C=-10mA 60
320
V_CE=-3.0V I_C=-500mA 10
I_C=-150mA I_B=-15mA
-0.2 -0.6 V
Base to Emitter Voltage
V_BE
V_CE=-3.0V I_C=-10mA
-0.64
V
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