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| 2SA562M Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a SOT-23 Plastic Package | |||
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2SA562M
Rev.F Apr.-2017
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Base
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-35
-30
-5.0
-500
-100
400
150
-55ï½150
åä½
Unit
V
V
V
mA
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Collector to Base Voltage
Transition Frequency
Collector Output Capacitance
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
ICBO VCB=-35V IE=0
-0.1 μA
IEBO VEB=-5.0V IC=0
-0.1 μA
hFE(1) VCE=-1.0V IC=-100mA 70
240
hFE(2) VCE=-6.0V IC=-400mA 25
VCE(sat) IC=-100mA IB=-10mA
-0.1 -0.25 V
VBE VCE=-1.0V IC=-100mA
fT VCE=-6.0V IC=-20mA
Cob
VCB=-6.0V IE=0
f=1.0MHz
-0.8 -1.0 V
200
MHz
13
pF
http://www.fsbrec.com
2/6
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