2SA1213 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

2SA1213
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Collector Base-Continuous
Collector Power Dissipation
Collector Power Dissipation*
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
*P_C(Ta=25℃)
T_j
T_stg
*BR2SA1213 mounted on ceramic substrate(250mm²Ã—0.8t).
数值
Rating
-50
-50
-5.0
-2.0
-0.4
500
1000
150
-55～150
单位
Unit
V
V
V
A
A
mW
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
Collector Cut-Off Current
I_CBO V_CB=-50V I_E=0
-0.1 μA
Emitter Base Cut-Off Current
I_EBO V_EB=-5.0V I_C=0
Collector to Emitter Breakdown
Voltage
V_CEO I_C=-10mA I_B=0
-50
-0.1 μA
V
DC Current Gain
Collector to Emitter Saturation
Voltage
h_FE(1) V_CE=-2.0V I_C=-500mA 70
h_FE(2) V_CE=-2.0V I_C=-2.0A
20
V_CE(sat) I_C=-1.0A
I_B=-0.05A
240
-0.5 V
Collector to Base Saturation Voltage V_BE(sat) I_C=-1.0A I_B=-0.05A
-1.2 V
Transition Frequency
Collector Output Capacitance
f_T V_CE=-2.0V I_C=-500mA
C_ob
V_CB=-10V
f=1MHz
I_E=0
120
MHz
40
pF
Turu-On Time
Storage Time
Fall Time
t_on
t_stg
-I_B1=I_B2=0.05A
V_CC=-30V
t_f
0.1
1.0
μS
0.1
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