2SA1145 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

2SA1145
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
DATA SHEET
数值
Rating
-150
-150
-5.0
-50
-5.0
800
150
-55～150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
V_CEO I_C=-1.0mA I_B=0
I_CBO V_CB=-150V I_E=0
I_EBO V_EB=-5.0V I_C=0
h_FE V_CE=-5.0V I_C=-10mA
V_CE(sat) I_C=-10mA I_B=-1.0mA
V_BE V_CE=-5.0V I_C=-10mA
f_T I_C=-10mA V_CE=-5.0V
C_ob
V_CB=-10V
f=1.0MHz
I_E=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-150
V
-0.1 μA
-0.1 μA
80
240
-1.0 V
-0.8 V
200
MHz
2.5
pF
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