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| 2N6131 Datasheet, PDF (2/5 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-220 Plastic Package. | |||
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2N6131
Rev.F Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC(TC=25â )
Tj
Tstg
DATA SHEET
æ°å¼
Rating
100
80
5.0
7.0
10.0
50
150
-55ï½150
åä½
Unit
V
V
V
A
A
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCEO IC=100mA IB=0
VCBO IC=1mA
IE=0
Emitter to Base Breakdown Voltage VEBO IE=1mA
Ic=0
Collector Cut-Off Current
ICBO VCB=80V IE=0
Collector Cut-Off Current
ICEO VCE=80V IB=0
Emitter Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=4.0V
VCE=4.0V
VCE(sat) IC=6.0A
IC=3.0A
IC=5.0A
IB=1.0A
Base to Emitter On Voltage
VBE(on) IC=6.0A
VCE=4.0V
Transition Frequency
fT IC=1.0A
VCE=4.0V
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
100
V
80
V
5.0
V
0.1 mA
1.0 mA
1.0 mA
10
100
5.0
1.5 V
2.0 V
3.0
MHz
http://www.fsbrec.com
2/5
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