2N6124 Datasheet, PDF (2/6 Pages) Savantic, Inc. – Silicon PNP Power Transistors

2N6124
Rev.F Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_C(T_C=25℃)
T_j
T_stg
数值
Rating
-45
-45
-5.0
-4.0
-7.0
-1.0
40
150
-55～150
单位
Unit
V
V
V
A
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage*
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
*V_CEO
测试条件
Test Conditions
I_C=-100mA I_B=0
V_CBO I_C=-1mA
I_E=0
V_EBO I_E=-1mA
I_c=0
Collector Cut-Off Current
I_CBO
V_CB=-45V I_E=0
Collector Cut-Off Current
I_CEO
V_CE=-45V I_B=0
Emitter Cut-Off Current
I_EBO
V_EB=-5.0V I_C=0
DC Current Gain
Collector to Emitter Saturation
Voltage*
Collector to Emitter Saturation
Voltage*
*h_FE(1)
*h_FE(2)
*V_CE(sat)
V_CE=-2.0V
V_CE=-2.0V
I_C=-1.5A
I_C=-1.5A
I_C=-4.0A
I_B=0.15A
*V_CE(sat) I_C=-4.0A
I_B=-1.0A
Base to Emitter On Voltage*
*V_BE(on) I_C=-1.5A
Transition Frequency
f_T
I_C=-1.0A
f=1.0MHz
*Pulse test: pulse width ≤300 μs; duty cycle ≤2%.
V_CE=-2.0V
V_CE=-4.0V
*脉冲测试：脉宽≤300μs；占空比≤2%。
最小值 典型值 最大值 单位
Min Typ Max Unit
-45
V
-45
V
-5.0
mA
-0.1 mA
-1.0 mA
-1.0 mA
25
100
10
-0.6 V
-1.4 V
-1.2 V
2.5
MHz
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