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| 2N5551 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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2N5551
Rev.F Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
180
160
6.0
600
300
625
150
-55ï½150
åä½
Unit
V
V
V
mA
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
Collector Cut-Off Current
ICBO VCB=180V IE=0
Emitter Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=5.0V IC=10mA
DC Current Gain
hFE(2) VCE=5.0V IC=50mA
hFE(3) VCE=5.0V IC=1.0mA
Collector to Emitter Saturation
Voltage
VCE(sat) (1) IC=10mA
VCE(sat) (2) IC=50mA
IB=1.0mA
IB=5.0mA
VBE(sat) (1) IC=10mA
Base to Emitter Saturation Voltage
VBE(sat) (2) IC=50mA
IB=1.0mA
IB=5.0mA
Base to Emitter Voltage
VBE VCE=5.0V IC=10mA
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
Storage Time
fT VCE=10V IC=10mA
Cob
VCB=10V
f=1.0MHz
IE=0
ton
IC=100mA
IB1=-IB2=10mA
toff
IC=100mA
IB1=-IB2=10mA
tstg IC=100mA
IB1=-IB2=10mA
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
0.1 μA
0.1 μA
50 200 400
20 160
40 190
0.06 0.15 V
0.09 0.3 V
0.7 1.0 V
0.8 1.0 V
0.68 0.75 V
50 110
MHz
2.2 5.0 pF
0.3
μs
0.4
μs
0.2
μs
http://www.fsbrec.com
2/6
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