2N5088 Datasheet, PDF (2/6 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

2N5088
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
35
30
4.5
100
625
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter On Voltage
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
符号
Symbol
测试条件
Test Conditions
I_CBO V_CB=20V I_E=0
I_EBO V_EB=3V
I_C=0
h_FE(1) V_CE=5V
I_C=100μA
h_FE(2) V_CE=5V
I_C=10mA
h_FE(3) V_CE=5V
I_C=1mA
V_CE(sat) I_C=10mA I_B=1mA
V_BE(on) I_C=10mA
V_CE=5V
V_CEO I_C=1mA
I_B=0
V_CBO
f_T
C_ob
C_eb
I_C=100μA
I_C=500μA
f=20MHz
V_CB=5V
f=100KHz
V_BE=0.5V
f=100KHz
I_E=0
V_CE=5mA
I_E=0
I_C=0
最小值 典型值 最大值 单位
Min Typ Max Unit
50 nA
50 nA
300 900
300
350
0.5 V
0.8 V
30
V
35
V
50
MHz
4 pF
10 pF
http://www.fsbrec.com
2/6