2N5064 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Thyristor sensitive gate

2N5064
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state
voltages
RMS on-state current
Average on-state current
Repetitive peak on-state current
Non-repetitive peak on-state
current
I^2t for fusing
Peak gate current
Peak gate power
Junction Temperature
Storage Temperature Range
符号
Symbol
V_DRM,
V_RRM
I_T(RMS)
I_T(AV)
I_TRM
I_TSM
I²t
I_GM
P_GM
T_j
T_stg
测试条件
Test Conditions
Half sine wave
T_C≤67℃
T_C≤102℃
T_a≤25℃
t=8.3ms
T_a=25℃
f=120Hz
T_a=25℃
t=8.3ms
t_p=300μs,
数值
Rating
200
0.8
0.51
0.255
8.0
10
0.4
1
0.1
-65～125
-65～150
单位
Unit
V
A
A
A
A
A²S
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
符号
Symbol
I_GT
I_L
I_H
V_T
V_GT
I_D,I_R
dv/dt
测试条件
Test Conditions
V_D=V_DRM(max)
R_L=100Ω
gate open circuit
Tc =25℃
Tc=-65℃
最小值 典型值 最大值 单位
Min Typ Max Unit
200
μA
350
V_D=12V
R_GK=1KΩ
6.0 mA
V_D=12V
R_GK=1KΩ
5.0 mA
I_T=1.2A peak t_p=300μs δ≤0.01
1.7 V
Tc =25℃
V_D=V_DRM(max)R_L=100
Ω; gate open circuit
Tc =-65℃
Tc=125℃ 0.1
0.8
1.2 V
V_D=V_DRM(max)
V_R=V_RRM(max)
Tc =25℃
Tc=125℃
T_C=25℃ T_j=125℃
V_DM=67%V_DRM(max)
R_GK=1KΩ exponential waveform
10
μA
50
25
V/us
http://www.fsbrec.com
2/6