2N4403 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

2N4403
Rev.F Sep.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
DATA SHEET
数值
Rating
-40
-40
-5.0
-600
625
200
150
-55～150
单位
Unit
V
V
V
mA
mW
℃ /W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=-0.1mA I_E=0
V_CEO I_C=-1.0mA I_B=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-40
V
-40
V
Emitter to Base Breakdown Voltage V_EBO I_E=-0.1mA I_C=0
-5.0
V
Collector Cut-Off Current
I_CBO V_CB=-40V I_E=0
-50 nA
Emitter Cut-Off Current
I_EBO V_EB=-5V
I_C=0
-50 nA
h_FE(1) V_CE=-2.0V I_C=-150mA 100
300
DC Current Gain
h_FE(2) V_CE=-1.0V I_C=-0.1mA 30
h_FE(3) V_CE=-1.0V I_C=-1.0mA 60
h_FE(4) V_CE=-1.0V I_C=-10mA
100
h_FE(5) V_CE=-2.0V I_C=-500mA 20
Collector to Emitter Saturation
Voltage
V_{CE(sat) (1)} I_C=-150mA I_B=-15mA
V_{CE(sat) (2)} I_C=-500mA I_B=-50mA
-0.4 V
-0.75 V
V_{BE(sat) (1)} I_C=-150mA I_B=-15mA
Base to Emitter Saturation Voltage
V_{BE(sat) (2)} I_C=-500mA I_B=-50mA
-0.75
-0.95 V
-1.3 V
Current Gain Bandwidth Product
f_T V_CE=-10V I_C=-20mA 200
MHz
Delay Time
Rise Time
t_d
V_CC=-30V I_C=-150mA
t_r
I_B1=-15mA
15 ns
20 ns
Storage Time
Fall Time
t_s
V_CC=-30V I_C=-150mA
t_f
I_B1=I_B2=-15mA
225 ns
30 ns
http://www.fsbrec.com
2/6