2N4401 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN switching transistor

2N4401
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
60
40
6.0
600
625
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=0.1mA I_E=0
V_CEO I_C=1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=0.1mA I_C=0
Collector Cut-Off Current
I_CBO V_CB=60V I_E=0
Emitter Cut-Off Current
I_EBO V_EB=6.0V I_C=0
h_FE(1) V_CE=1.0V I_C=150mA
h_FE(2) V_CE=2.0V I_C=500mA
DC Current Gain
h_FE(3) V_CE=1.0V I_C=10mA
h_FE(4) V_CE=1.0V I_C=1.0mA
h_FE(5) V_CE=1.0V I_C=0.1mA
Collector to Emitter Saturation
Voltage
V_{CE(sat) (1)} I_C=150mA
V_{CE(sat) (2)} I_C=500mA
I_B=15mA
I_B=50mA
Base to Emitter Saturation Voltage
Current Gain Bandwidth Product
V_{BE(sat) (1)} I_C=150mA
V_{BE(sat) (2)} I_C=500mA
f_T
V_CE=10V
f=100MHz
I_B=15mA
I_B=50mA
I_C=20mA
Delay Time
Rise Time
t_d
V_CC=30V
I_C=150mA
t_r
I_B1=15mA
Storage Time
Fall Time
t_s
V_CC=30V
I_C=150mA
t_f
I_B1=-I_B2=15mA
最小值 典型值 最大值 单位
Min Typ Max Unit
60
V
40
V
6.0
V
50 nA
50 nA
100
300
40
80
40
20
0.4 V
0.75 V
0.75 0.95 V
1.2 V
250
MHz
15 ns
20 ns
225 ns
30 ns
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