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| 2N4126 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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2N4126
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-25
-25
-4.0
-200
625
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=-10μA IE=0
VCEO IC=-1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0
Collector Cut-Off Current
ICBO VCB=-20V IE=0
Emitter Cut-Off Current
IEBO VEB=-3.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=-1.0V
VCE=-1.0V
VCE(sat) IC=-50mA
IC=-2.0mA
IC=-50mA
IB=-5.0mA
Base to Emitter Saturation Voltage
Current Gain Bandwidth Product
Input Capacitance
Collector-Base Capacitance
Noise Figure
VBE(sat)
fT
Cib
Ccb
NF
IC=-50mA IB=-5.0mA
IC=-10mA VCE=-20V
f=100MHz
VEB=-0.5V IC=0
f=1.0MHz
VCB=-5.0V IE=0
f=100KHz
IC=-100μA VCE=-5.0V
Rs=1.0Kâ¦
f=10Hz to 15.7KHz
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-25
V
-25
V
-4.0
V
-0.05 μA
-0.05 μA
120
360
60
-0.4 V
-0.95 V
250
MHz
10 pF
4.5 pF
4.0 dB
http://www.fsbrec.com
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