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| 2N3906G Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a TO-92 Plastic Package | |||
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2N3906G
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-40
-40
-5.0
-200
625
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=-10μA IE=0
VCEO IC=-1.0mA IB=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-40
V
-40
V
Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0
-5.0
V
Collector Cut-Off Current
ICBO VCB=-40V IE=0
-0.1 μA
Emitter Cut-Off Current
IEBO VEB=-5.0V IC=0
-0.1 μA
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1) VCE=-1.0V IC=-10mA
100
hFE(2) VCE=-1.0V IC=-100mA 30
VCE(sat) IC=-50mA IB=-5.0mA
300
-0.4 V
Base to Emitter Saturation Voltage VBE(sat) IC=-50mA IB=-5.0mA
Current Gain Bandwidth Product
fT
IC=-10mA VCE=-20V
f=100MHz
250
Output Capacitance
Cob
VCB=-5.0V IE=0
f=100KHz
Turn On Time
Turn Off Time
Ton
VCC=-3.0V IC=-10mA
VBE=-0.5V IB1=-1.0mA
Toff
VCC=-3.0V IC=-10mA
IB1=-IB2=-1.0mA
-0.95 V
MHz
4.5 pF
0.07 μs
0.3 μs
http://www.fsbrec.com
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