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| 2N3904 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN switching transistor | |||
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2N3904
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
60
40
6.0
200
625
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=10μA
IE=0
VCEO IC=1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=10μA IC=0
Collector Cut-Off Current
ICBO VCB=50V IE=0
Emitter Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=1.0V
VCE=1.0V
VCE(sat) IC=50mA
IC=10mA
IC=100mA
IB=5.0mA
Base to Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
VBE(sat)
fT
Cob
Ton
Toff
IC=50mA IB=5.0mA
IC=10mA VCE=20V
f=100MHz
VCB=5.0V IE=0
f=1.0MHz
VCC=3.0V VBE=0.5V
IC=10mA IB1=1.0mA
VCC=3.0V IC=10mA
IB1=-IB2=1.0mA
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
60
V
40
V
6.0
V
0.05 μA
0.05 μA
100
300
30
0.3 V
0.95 V
300
MHz
4.0 pF
0.07 μs
0.25 μs
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