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BSS123 Datasheet, PDF (1/6 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor
BSS123
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
极低的 RDS(ON)为高密度电池设计。
High density cell design for extremely low RDS(ON).
用途 / Applications
适用于作负载开关或脉宽调制应用。
This device is suitable for use as a load switch or in PWM applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1:S
PIN 2:G
PIN 3:D
印章代码 / Marking
Marking
HSA
http://www.fsbrec.com
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