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| BRG10N120D Datasheet, PDF (1/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package | |||
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BRG10N120D
Rev.D Oct.-2015
DATA SHEET
æè¿° / Descriptions
TO-3P å¡å°å°è£
ç»ç¼æ
åææ¶ä½ç®¡ãInsulated-Gate Bipolar Transistor in a TO-3P Plastic Package.
ç¹å¾ / Features
å
置快æ¢å¤äºæ管ï¼é«å¯é æ§åç稳å®æ§ï¼ä½å
³ææèï¼ä½é¥±ååéã
Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low
saturation voltage.
ç¨é / Applications
æåºå çã
Eddy-current heating.
å
é¨çæçµè·¯ / Equivalent Circuit
å¼èæå / Pinning
1
2
3
PIN1ï¼Gate
PIN 2ï¼Collector
PIN 3ï¼Emitter
æ¾å¤§åå°ç« 代ç / hFE Classifications & Marking
è§å°ç« 说æãSee Marking Instructions.
http://www.fsbrec.com
1/6
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