2SC3420 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

2SC3420
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package.

特征 / Features
高直流电增益,饱和压降低, 高集电极耗散功率。
High DC current gain, low saturation voltage,high collector power dissipation.
用途 / Applications
用于存储器闪光驱动,中功率放大电路。
Storobo flash applications, medium power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 ₃
PIN1：Emitter
PIN 2：Collector
PIN 3：Base
放大及印章代码 / h_FE Classifications & Marking
h_FE Classifications
Symbol
h_FE Range
Y
140～240
GR
200～400
BL
300～600
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