2SC3356W Datasheet, PDF (1/6 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

2SC3356W
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package.

特征 / Features
低噪声和高功率增益。
Low noise and high power gain.

用途 / Applications
用于甚高频、超高频和有线电视频段的低噪声放大。
low noise amplifier at VHF, UHF and CATV band applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1：Emitter
PIN 2：Base PIN 3：Collector
印章代码 / Marking
h_FE Classifications
Symbol
h_FE Range
Marking
Q
50～100
HR23
R
80～160
HR24
S
125～250
HR25
T
200～330
HR26
http://www.fsbrec.com
1/6