2SC3356 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

2SC3356
Rev.F Apr.-2017
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
低噪声和高功率增益。
Low noise and high power gain.
用途 / Applications
用于甚高频、超高频和有线电视频段的低噪声放大。
low noise amplifier at VHF, UHF and CATV band applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
1
2
PIN1：Base
PIN 2：Emitter
PIN 3：Collector
放大及印章代码 / h_FE Classifications & Marking
h_FE Classifications
Symbol
h_FE Range
Q
50～100
R
80～160
Marking
HR23
HR24
S
125～250
HR25
T
200～330
HR26
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