FMBT4403_17 Datasheet, PDF (5/10 Pages) Formosa MS – SMD PNP Transistor

Rating and characteristic curves (FMBT4403)
200
100
70
50
30
20
10
IC/IB= 10
IC/IB= 20
IB1 = IB2
ts4= ts - 1/8 tf
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
h P ARAMETERS
VCE = ±10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other h parameters for this series of transistors. To
obtain these curves, a high±gain and a low±gain unit were
selected from the FMBT4403 lines, and the same units
were used to develop the correspondingly±numbered curves
on each graph.
1000
700
500
100k
50k
20k
FMBT4403 UNIT 1
FMBT4403 UNIT 2
300
10k
200
5k
2k
FMBT4403 UNIT 1
100
FMBT4403 UNIT 2
1k
70
500
50
200
30
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
100
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
20
500
10
FMBT4403 UNIT 1
FMBT4403 UNIT 2
5.0
100
50
2.0
20
1.0
FMBT4403 UNIT 1
10
FMBT4403 UNIT 2
0.5
5.0
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC ,COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
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Page 5
Document ID Issued Date
DS-231118
2008/02/10
Revised Date Revision
2010/03/10
B
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