FMBT3906W Datasheet, PDF (4/10 Pages) Formosa MS – SMD PNP Transistor

Rating and characteristic curves (FMBT3906W)
<1ns
+0.5V
10k
10.6V
300 ns
DUTY CYCLE=2%
3V
275
+9.1V
0
CS<4 pF
10<t ₁<500us
t1
DUTY CYCLE=2%
<1ns
10k
1N916
10.9V
3V
275
CS<4 pF
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTIC
TJ=25°C, -------- TJ=125°C
Fig. 3 Capacitance vs Reverse Bias
10
7.0
5.0
C_obo
C_ibo
3.0
2.0
1.0
0.1
0.5
1.0 2.0 3.0 5.0 7.0 10 20
40
Reverse Bias (Volts)
Fig. 4 Charge Data
5000
1000
V_CC = 40V
I_C/I_C = 10
500
Q_T
100
50
1.0
2.0
Q_A
5.0
10
20
50
Collector Current, Ic (mA)
100 200
Fig. 5 Turn-On Time vs Collector Current
500
I_C/I_B = 10
100
50
10
5
1.0
t_r@V_CC = 3.0V
15V
t_d@V_OB = 0V
40V
2.0V
10
100 200
Collector Current, Ic (mA)
Fig. 6 Fall Time vs Corrector Current
500
V_CC = 40V
I_B1 = I_B2
I_C/I_B = 20
100
50
10
5
1.0
I_C/I_B = 10
10
Collector Current, Ic (mA)
100 200
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Page 4
Document ID Issued Date
DS-231132
2009/08/10
Revised Date Revision
2010/03/10
B
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