FMBT2222 Datasheet, PDF (4/9 Pages) Formosa MS – 600mA Silicon NPN Epitaxial Planar Transistor

NPN Epitaxial Planar Transistor
FMBT2222 / FMBT2222A
Formosa MS
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
SMALL–SIGNAL CHARACTERISTICS
FMBT2222
FMBT2222A
FMBT2222
FMBT2222A
FMBT2222
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
FMBT2222A
SWITCHING CHARACTERISTICS(FMBT2222A only)
3.Pulse Test:Pulse Width 300 μs, Duty Cycle 2.0%.
4.f_T is defined as the frequency at which Ihfe extrapolates to unity.
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Page 4
Document ID Issued Date
DS-231107 2008/02/10
Revised Date Revision
2011/07/21
D
Page.
9