FMSBSS138 Datasheet, PDF (3/8 Pages) Formosa MS – N-Channel SMD MOSFET

N-Channel SMD MOSFET
FMSBSS138
Formosa MS
Electrical characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN. TYP. MAX. UNIT
STATIC(1)
Drain-source breakdown voltage
VGS = 0V, ID = 250µA
V(BR)DSS 50
V
Gate-source threshold voltage
VDS = VGS , ID = 1.0mA
VGS(th) 0.5
1.5 V
Drain-source on-state resistance
Zero gate voltage drai n current
Gate-source leakage current
VGS = 2.75V, ID < 200mA,TA=-40 °C to + 85 °C
VGS = 5.0V, ID = 200mA
VDS = 25V, VGS = 0V
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
RDS(on)
IDSS
IGSS
5.6 10
Ω
3.5
0.1
µA
0.5
±0.1 µA
Forward transconductance
VDS=25V, ID=200mA, f=1.0KHZ
gfs
100
mmhos
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25V, VGS = 0V
f = 1.0 MHz
Ciss
Coss
Crss
40 50
12 25 pF
3.5 5.0
SWITCHING(2)
Turn-on delay time
VDD = 30V, ID = 200mA
Turn-off delay time
VDD = 30V, ID = 200mA
Notes 1: Pulse Test : PW≦300µs,duty cycle≦2%
2: Switching time is essentially independent of operating temperature.
td(on)
td(off)
20
ns
20
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Document ID Issued Date
DS-231147 2009/08/10
Revised Date Revision
2011/07/21
C
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