FMS2303 Datasheet, PDF (3/8 Pages) Formosa MS – 30V P-Channel Enhancement Mode MOSFET

SMD MOSFET
FMS2303
Formosa MS
Electrical characteristics (At T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
STATIC
Drain-source breakdown voltage
VGS = 0V, ID= -250uA
Zero gate voltage drain current
Gate-body leakage current-forward
Gate-body leakage current-reverse
Gate threshold voltage
Static drain-source on-resistance^a
Diode Forward Voltage
VDS = -30V, VGS = 0V, TJ = 25^OC
VGS = 20V, VDS=0
VGS = -20V, VDS=0
VDS = VGS, ID = -250uA
VGS = -10V, ID = -1.7A
VGS = -4.5V, ID= -1.3A
VGS =0V, IS = -1.25A, TJ =25^OC
DYNAMIC
Intput capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
VDS = -15V, VGS = 0V,
f=1.0MHz
VDS = -15V, ID = -1.7A
VGS=-10.0V
Turn-On Delay Time
Turn-Off Delay Time
Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
VDS = -15V,RL=15Ω, RGEN=6Ω
VGS=-10V
Symbol
MIN. TYP. MAX. UNIT
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(ON)
VSD
-30
-1.0
60
75
-0.7
-1.0
100
-100
-3.0
75
100
-1.4
V
μA
nA
nA
V
mΩ
V
Ciss
Coss
Crss
Q_g
Q_gs
Q_gd
Td(on)
Tr
Td(off)
Tf
464
72
pF
23
14.4
2.7
nC
3.6
32
17
ns
40
5
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Page 3
Document ID Issued Date
DS-231135 2011/03/10
Revised Date Revision
2011/07/21
B
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