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FMBTA55 Datasheet, PDF (3/9 Pages) Formosa MS – Driver Transistor
Driver Transistor
FMBTA55 / FMBTA56
Formosa MS
Electrical Characteristics (AT TA=25oC unless otherwise noted)
Off Characteristics
PARAMETER
CONDITIONS
Collector-Base breakdown voltage
FMBTA55
FMBTA56
Ic = -100µAdc, IE = 0
Collector-Emitter breakdown voltage(3) Ic = -1.0mAdc, IB = 0
FMBTA55
FMBTA56
Emitter-Base breakdown voltage
IE = -100µAdc, IC = 0
Collector Cutoff Current
VCE=-60Vdc, IB=0
Collector Cutoff current
FMBTA55
FMBTA56
VCB = -60Vdc, IE = 0
VCB = -80Vdc, IE = 0
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
ICBO
On Characteristics
PARAMETER
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
CONDITIONS
Ic = -10mAdc, VCE = -1.0Vdc
Ic = -100mAdc, VCE = -1.0Vdc
Ic = -100mAdc, IB = -10mAdc
Ic = -100mAdc, VCE = -1.0Vdc
Small Signal Characteristics
PARAMETER
CONDITIONS
Current Gain Bandwidth Product (4)
Ic = -100mA, VCE = -1.0Vdc,
f=100MHz
3. Pulse test: pulse width <=300µs, duty cycle<=2.0%
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
SYMBOL
hFE
VCE(sat)
VBE(on)
SYMBOL
fT
Min.
-60
-80
-60
-80
-4.0
-
-
-
Min.
100
100
-
-
Min.
50
Max.
-
-
-
-
-
-0.1
-0.1
-0.1
UNIT
Vdc
Vdc
Vdc
µAdc
µAdc
Max.
-
-
-0.25
-1.2
UNIT
-
Vdc
Vdc
Max.
-
UNIT
MHz
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Page 3
Document ID Issued Date
DS-231164 2010/11/05
Revised Date Revision
2011/07/21
B
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